| 자료유형 : | 기사 |
|---|---|
| 기사명 : | An Analytical Model of the First Eigen Energy Level for MOSFETs Having Ultrathin Gate Oxides |
| 저자 : | B.Pavan Kumary Yadav;Aloke K. Dutta |
| 발행사항 : | A Publication of the Institute of Electronics Engineers of Korea : Seoul , 2010 |
| 수록잡지명 : | Journal of Semiconductor Technology and Science[2001-2010] : 2010. September Vol.10 No.3 |
| 페이지 : | 203 |
서평쓰기