| 자료유형 : | 기사 |
|---|---|
| 기사명 : | Electrostatic Dischare(ESD) and Failure Analysis : Models, Methodologies and Mechanisms for CMOS, Silicon On Insulatro and Silicon Germanium Technologies |
| 저자 : | Voldman, Steven H. |
| 발행사항 : | A Publication of the Institute of Electronics Engineers of Korea : Seoul , 2003 |
| 수록잡지명 : | Journal of Semiconductor Technology and Science[2001-2010] : 2003. September Vol.3 No.3 |
| 페이지 : | 153 |
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