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• LDR

  01796camoa2200253 u pc3

• 001

  000000316992

• 005

  20120927084505

• 008

  890207s1990 us a b 001 eng

• 010

  ▼a  89030939

• 015

  ▼a  GB91-46058

• 020

  ▼a  0471631191

• 040

  ▼a  DLC
  ▼c  DLC
  ▼d  CPO
  ▼d  UKM

• 049

  ▼a  KMAL
  ▼l  AZ0000150064

• 082

  ▼a  621.38152
  ▼2  19

• 090

  ▼a  621.38152
  ▼b  W19i

• 100

  ▼a  Wang, Cheng T.,
  ▼e  ed.

• 245

  ▼a  Introduction to semiconductor technology:
  ▼b  GaAs and related compounds/
  ▼d  edited by Cheng T. Wang.

• 260

  ▼a  New York:
  ▼b  Wiley,
  ▼c  1990.

• 300

  ▼a  xxii, 601 p.:
  ▼b  ill.;
  ▼c  25 cm.

• 500

  ▼a  "A Wiley-Interscience publication."

• 504

  ▼a  Includes bibliographical references.

• 505

  ▼a  Introduction to the physics of gallium arsenide devices / Harold L. Grubin -- Modeling of GaAs and AlGaAs/GaAs field effect transistors / Michael Shur -- Heterostructure field effect transistors / Shin-Shem Pei, Nitin J. Shah -- Heterojunction bipolar transistor technology / Peter M. Asbeck ... [et al.] -- Resonant tunneling diodes and transistors / Susanta Sen, Federico Capasso, Fabio Beltram -- JFET technology / William A. Geideman -- Design of high-speed GaAs MESFET digital LSI circuits / Christopher T.M. Chang -- GaAs FET amplifier and MMIC design techniques / Thomas R. Apel -- GaAs optoelectronic device technology / Paul Kit-Lai Yu, Pei-Chuang Chen -- Electr-optical properties of heterojunction and quantum well structures of III-V compound semiconductors and their applications in guided-wave devices / William S.C. Chang -- Quantum mechanical corrections to classical transport in submicron/ultrasubmicron dimensions / Michael A. Stroscio.

• 650

  ▼a  Gallium arsenide semiconductors.

• 653

  ▼a  INTRODUCTION
  ▼a  TO
  ▼a  SEMICONDUCTOR
  ▼a  TECHNOLOGY
  ▼a  GAAS
  ▼a  AND
  ▼a  RELATED
  ▼a  COMPOUNDS

• 991

  ▼a  단행본

• 090

  ▼a  621.38152
  ▼b  W19i