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• LDR

  00991camoa2200253 u pc3

• 001

  000000316993

• 005

  20120927084506

• 008

  861104s1987 us a b 001 eng

• 010

  ▼a  86027389 //r90

• 015

  ▼a  GB88-8363

• 020

  ▼a  007065381X

• 040

  ▼a  DLC
  ▼c  DLC
  ▼d  UKM

• 049

  ▼a  KMAL
  ▼l  AZ0000136396

• 082

  ▼a  621.381522
  ▼2  19

• 090

  ▼a  621.381522
  ▼b  T78o

• 100

  ▼a  Tsividis, Yannis.

• 245

  ▼a  Operation and modeling of the MOS transistor/
  ▼d  Yannis P. Tsividis.

• 260

  ▼a  New York:
  ▼b  McGraw-Hill,
  ▼c  1987.

• 300

  ▼a  xx, 505 p.:
  ▼b  ill.;
  ▼c  24 cm.

• 440

  ▼a  McGraw-Hill series in electrical engineering.
  ▼p  Electronics and electronic circuits

• 440

  ▼a  McGraw-Hill series in electrical engineering.
  ▼p  VLSI

• 504

  ▼a  Includes bibliographies and index.

• 650

  ▼a  Metal oxide semiconductors
  ▼x  Mathematical models.

• 653

  ▼a  OPERATION
  ▼a  AND
  ▼a  MODELING
  ▼a  OF
  ▼a  THE
  ▼a  MOS
  ▼a  TRANSISTOR
  ▼a  MCGRAWHILL
  ▼a  SERIES
  ▼a  IN
  ▼a  ELECTRICAL
  ▼a  ENGINEERING
  ▼a  ELECTRONICS
  ▼a  ELECTRONIC
  ▼a  CIRCUITS
  ▼a  VLSI

• 991

  ▼a  단행본

• 090

  ▼a  621.381522
  ▼b  T78o