MARC 닫기

• LDR

  01209nam a2200265 u 4500

• 001

  000000369626

• 005

  20120928041209

• 008

  010404s1995 us a b 001 eng

• 010

  ▼a  95022910 //r96

• 020

  ▼a  1558992812 (alk. paper):
  ▼c  $95.00

• 049

  ▼a  KMAL
  ▼l  AZ0000202855

• 082

  ▼a  621.38152
  ▼2  20

• 090

  ▼a  621.38152
  ▼b  D36d

• 245

  ▼a  Defect and impurity engineered semiconductors and devices:
  ▼b  symposium held April 17-21, 1995, San Francisco, California, U.S.A./
  ▼d  editors, S. Ashok ... [et al.].

• 260

  ▼a  Pittsburgh, Pa.:
  ▼b  Materials Research Society,
  ▼c  c1995.

• 300

  ▼a  xxi, 1054 p.:
  ▼b  ill.;
  ▼c  24 cm.

• 440

  ▼a  Materials Research Society symposium proceedings,
  ▼s  0272-9172;
  ▼v  v. 378

• 504

  ▼a  Includes bibliographical references and index.

• 650

  ▼a  Semiconductors.

• 650

  ▼a  Semiconductors
  ▼x  Defects.

• 650

  ▼a  Semiconductors
  ▼x  Impurity distribution.

• 653

  ▼a  DEFECT
  ▼a  AND
  ▼a  IMPURITY
  ▼a  ENGINEERED
  ▼a  SEMICONDUCTORS
  ▼a  DEVICES
  ▼a  SYMPOSIUM
  ▼a  HELD
  ▼a  APRIL
  ▼a  1721
  ▼a  1995
  ▼a  SAN
  ▼a  FRANCISCO
  ▼a  CALIFORNIA
  ▼a  USA
  ▼a  MATERIALS
  ▼a  RESEARCH
  ▼a  SOCIETY
  ▼a  PROCEEDINGS
  ▼a  MRS

• 700

  ▼a  Ashok, S,

• 710

  ▼a  Materials Research Society.:
  ▼c  California, U.S.A.)
  ▼d  (1995.

• 740

  ▼a  MRS symposium proceedings.

• 991

  ▼a  단행본

• 090

  ▼a  621.38152
  ▼b  D36d