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00886namsa2200229 u pc7
000000361029
20120928055218
010924s1991 ko 000 kor
▼a KMAL
▼l AB0000007205
▼f PW
▼a 김용윤
▼b 1
▼a Dominant radiation-induced point defects at the silicon/silicon dioxide interface/
▼d Yong Yun Kim and Jinok Park, Seung Joo Lee.
▼a [Seoul]:
▼b The Korean Physical Society,
▼c 1991.
▼a 1 file-folder(240-249 p.);
▼c 32 cm.
▼a DOMINANT
▼a RADIATIONINDUCED
▼a POINT
▼a DEFECTS
▼a AT
▼a THE
▼a SILICONSILICON
▼a DIOXIDE
▼a INTERFACE
▼a JOURNAL
▼a OF
▼a KOREAN
▼a PHYSICAL
▼a SOCIETY
▼a 김용윤.
▼a 박진옥.
▼a 이승주.
▼a Kim, Yong Yun.
▼a Park, JInok.
▼a Lee, Seung Joo.
▼a Journal of the Korean Physical Society.
▼t Journal of the Korean Physical Society,
▼g Vol. 24, No. 3
▼a 단행본
▼a 김용윤
▼b 1
| 자료유형 : | 단행본 |
|---|---|
| 분류기호 : | 김용윤 |
| 서명/저자사항 : | Dominant radiation-induced point defects at the silicon/silicon dioxide interface/ Yong Yun Kim and Jinok Park, Seung Joo Lee. |
| 발행사항 : | [Seoul]: The Korean Physical Society, 1991. |
| 형태사항 : | 1 file-folder(240-249 p.); 32 cm. |
| 개인저자 : | 김용윤. |
| 개인저자 : | 박진옥. |
| 개인저자 : | 이승주. |
| 개인저자 : | Kim, Yong Yun. |
| 개인저자 : | Park, JInok. |
| 개인저자 : | Lee, Seung Joo. |
| 모체 레코드 : | Journal of the Korean Physical Society, Vol. 24, No. 3 |
| 분류기호 : | 김용윤 |
| 언어 | 한국어 |
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